『環境ナノ部材』産業を集積化 - 世界トップレベルの『環境ナノ』拠点形成へ

Development of new functional optical devices and optical measurement techniques based on micro/nanostructure control technology

Research theme

Development of new functional optical devices and optical measurement techniques based on micro/nanostructure control technology

Participated in by

Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University; Nichia Corporation; Teramecs Co., Ltd.; Murata Manufacturing Co., Ltd.; Abel Systems, Inc.

Goal/Milestone

This research group aimed to develop devices making use of the optical propagation properties in a microstructural domain.

[1] Development of new functional optical devices using dielectric antenna
In this project, joint research was conducted with Abel Systems for the development and the simulation of optical properties of the devices. Besides, in cooperation with Abel Systems, we established volume production techniques, such as metal film plating and nano-imprint processes. Shown on the right is an SEM photograph of the prototype dielectric antenna.

[2] Development of a miniature surface plasmon (SPR) sensor
Joint research commenced in 2003 with Teramecs. In 2004, we constructed a prototype measurement system incorporating a new miniature SPR sensor. Proven to be extremely sensitive, the system was covered by Kyoto Shimbun (newspaper), was reported in an international research paper, and acquired two patents. In 2006, noting the superb properties of Lumicera (Murata Manufacturing) as translucent ceramic material, we demonstrated Lumicera’s properties as an SPR sensor presenting sharp wavelength selectivity with respect to reflectance. Photo on the left: core of the new miniature surface plasmon sensor, flow cell, and novel Lumicera translucent ceramic material

[3] Study of high-efficiency green light-emitting diode (LED) made possible through nanostructure control of semipolar nitride semiconductor
This study was promoted in 2006 to develop an innovative visible light-emitting device. We developed a technology by which we could deposit an InGaN light-emitting layer on a semipolar GaN substrate, which was expected to achieve highly efficient light emission by oblique orientation of the crystal. Using this, we successfully developed a high-luminance green LED (through joint research with Nichia Corporation). This method is based on findings obtained through basic material property studies, we found that the piezoelectric field of an oblique (11-22) crystal face is extremely low so that it is possible to increase electron-positive hole recombination probability. Photo on the right: device structure of the newly developed green LED and light emission